Technology | FTEX - Pioneers of GaNFET Power Management for EVs



A significant shift has taken place in the performance of Power Electronics Systems, with GaN transistors taking center stage. After reaching the theoretical limits of legacy MOSFETs, a new semiconductor material has risen and matches today higher performance criterias in newer systems. The new material is gallium nitride (GaN) a high electron mobility (HEMT) semiconductor, which is poised to usher in new power devices that are superior to the present state of the art.

Outperforming silicon MOSFETs and SiCFETs in terms of power density and switching frequency, GaNs’ performance has dramatically improved, allowing electric vehicle (EV) systems to show gains in the form factor, size, and efficiency in a variety of modern applications that were not previously reachable with silicon transistors.


GaNFETs have a breakdown field of 3.3 MV/cm, which is 3 times higher than silicon with 0.3 MV/cm. As a result, GaNs will theoretically support 10X more high voltage designs before failing. Thus, Gallium nitride outperforms silicon in high-voltage circuits such as high-power devices.


As a result of the GaN FET’s structure, it has a very low input capacitance, which enables faster switching speed (on/off) and excellent reverse-recovery, which is imperative for low-loss, and high-efficiency performance.


At comparable voltages, GaN FETs will be considerably more efficient than MOSFETs. They will operate at cooler temperatures since the thermal loads created by the circuit will be reduced, and their power loss will be greatly diminished.


GaNFETs are high electron mobility transistors (HEMT) that have a higher electric field strength than silicon. Therefore, GaN devices will reduce the need for thermal management components and reduce their size considerably than silicon semiconductors.

GaNRunner Technology




The R&D team at FTEX uses cutting-edge techniques and technology to research, develop, and produce the best products and solutions for our clients. We prioritize quality over failure rates and employ the most technologically advanced, cost-effective materials to offer high-quality solutions for improved performance, efficiency, and reliability.

Rapid Prototyping

Framework and Toolkit

FTEX developed a framework for rapid prototyping for the various modules that make up our GanRunner. This tool allows us to plug and play different control boards, and various commutation cell designs for the DC-DC and inverter, reducing our iteration time from 3 months to 3 weeks.

Perfect Waveforms

at Ultra High Frequency

FTEX is one of very few labs capable of reaching ultra clean waveforms at frequencies higher than 1Mhz. Thanks to our rapid prototyping framework, we tested dozens of designs and GAN/Driver combinations to reach the required waveform for the GanRunner.

World Leader

in Efficiency

FTEX’s 97% efficiency DC/DC converters are already the most efficiency high frequency converters in the world.


With our primary focus on the end-user experience, our proficiency extends beyond the mastery of GaNFETs, hardware, and firmware. As a Rider-Centric company, we go beyond the market expectations and deliver what riders need!

Through the addition of a full stack software solution to our products, we offer a unique and optimized experience that increases the performance, feel, and range of the electric vehicle.

This comprises:

  • AI/ML algorithms to optimize vehicle performance, feel and range.
  • Cloud platform for continuous data collection and algorithm optimization.
  • Complete Software Suite for vehicle management and algorithm optimization/customization.
  • Custom firmware designed by our team for our specific hardware, including firmware for our groundbreaking interleaved DC/DC Converter.
  • Built on proprietary application specific hardware optimized for next-generation EVs

OEMS for further information, please contact us.

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